Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

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dc.creatorGomez-Navarro, C.
dc.creatorDe Pablo, P. J.
dc.creatorGomez-Herrero, J.
dc.creatorBiel, B.
dc.creatorGarcia-Vidal, F. J.
dc.creatorRubio, A.
dc.creatorFlores, F.
dc.date2005-11-23
dc.date.accessioned2026-07-07T06:49:23Z
dc.date.available2026-07-07T06:49:23Z
dc.descriptionCarbon nanotubes are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge. Defects are known to modify the electrical resistance of carbon nanotubes. They can be present in as-grown carbon nanotubes, but controlling externally their density opens a path towards the tuning of the nanotube electronic characteristics. In this work consecutive Ar+ irradiation doses are applied to single-walled nanotubes (SWNTs) producing a uniform density of defects. After each dose, the room temperature resistance versus SWNT-length [R(L)] along the nanotube is measured. Our data show an exponential dependence of R(L) indicating that the system is within the strong Anderson localization regime. Theoretical simulations demonstrate that mainly di-vacancies contribute to the resistance increase induced by irradiation and that just a 0.03% of di-vacancies produces an increase of three orders of magnitude in the resistance of a 400 nm SWNT length.
dc.description16 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0511585
dc.identifierhttp://arxiv.org/abs/cond-mat/0511585
dc.identifierNature Materials 4, 534-539 (2005)
dc.identifierdoi:10.1038/nmat1414
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/104321
dc.subjectMaterials Science
dc.titleTuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
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