Point defects on III-V semiconductor surfaces

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dc.creatorSchwarz, G.
dc.creatorNeugebauer, J.
dc.creatorScheffler, M.
dc.date2000-10-23
dc.date.accessioned2026-07-07T02:39:05Z
dc.date.available2026-07-07T02:39:05Z
dc.descriptionThe basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calculated employing density-functional theory. Based on these results we discuss the electronic properties of surface defects, defect segregation, and compensation.
dc.description4 pages including figures. Submitted to Proceedings of the ICPS 25, Osaka, 17-22 September 2000. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html
dc.identifierhttps://arxiv.org/abs/cond-mat/0010342
dc.identifierhttp://arxiv.org/abs/cond-mat/0010342
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16918
dc.subjectMaterials Science
dc.titlePoint defects on III-V semiconductor surfaces
dc.typetext

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