Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances

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dc.creatorDesgreys, P.
dc.creatorDa Silva, J. Gomes
dc.creatorRobert, D.
dc.date2007-08-10
dc.date.accessioned2026-07-07T08:23:09Z
dc.date.available2026-07-07T08:23:09Z
dc.descriptionThe designs integrating the promising carbon nanotube transistors (CNTFET) will have to take into account the constraints implied by the strong dispersion inherent to nanotube manufacturing. This paper proposes to characterize the main CNTFET performances : on-current Ion, Ion/Ioff ratio and inverse sub-threshold slope S according to the dispersion on the nanotube diameter. For this purpose, we use a compact model suitable for testing several diameter values.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0708.1465
dc.identifierhttp://arxiv.org/abs/0708.1465
dc.identifierDans European Nano Systems Worshop - ENS 2006, Paris : France (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135894
dc.subjectMaterials Science
dc.titleDispersion Impact on Ballistic CNTFET n+-i-n+ Performances
dc.typetext

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