Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

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dc.creatorPala, M. G.
dc.creatorHackens, B.
dc.creatorMartins, F.
dc.creatorSellier, H.
dc.creatorBayot, V.
dc.creatorHuant, S.
dc.creatorOuisse, T.
dc.date2007-11-21
dc.date.accessioned2026-07-07T09:26:19Z
dc.date.available2026-07-07T09:26:19Z
dc.descriptionWe study the relationship between the local density of states (LDOS) and the conductance variation $ΔG$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $ΔG$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and $ΔG$. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-$ΔG$ correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system.
dc.description8 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/0711.3370
dc.identifierhttp://arxiv.org/abs/0711.3370
dc.identifierPhys. Rev. B 77, 125310 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.125310
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156708
dc.subjectMesoscale and Nanoscale Physics
dc.titleLocal Density of States in Mesoscopic Samples from Scanning Gate Microscopy
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