Carrier multiplication yields in CdSe and CdTe nanocrystals by transient photoluminescence

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dc.creatorNair, Gautham
dc.creatorBawendi, Moungi G
dc.date2007-08-29
dc.date.accessioned2026-07-07T08:26:19Z
dc.date.available2026-07-07T08:26:19Z
dc.descriptionEngineering semiconductors to enhance carrier multiplication (CM) could lead to increased photovoltaic cell performance and a significant widening of the materials range suitable for future solar technologies. Semiconductor nanocrystals (NCs) have been proposed as a favourable structure for CM enhancement, and recent measurements by transient absorption have shown evidence for highly efficient CM in lead chalcogenide and CdSe NCs. We report here an assessment of CM yields in CdSe and CdTe NCs by a quantitative analysis of biexciton and exciton signatures in transient photoluminescence decays. Although the technique is particularly sensitive due to enhanced biexciton radiative rates relative to the exciton, kradBX > 2 kradX, we find no evidence for CM in CdSe and CdTe NCs up to photon energies E > 3 Eg, well above previously reported relative energy thresholds.
dc.description9 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/0708.3866
dc.identifierhttp://arxiv.org/abs/0708.3866
dc.identifierPhysical Review B 76, 081304(R) (2007)
dc.identifierdoi:10.1103/PhysRevB.76.081304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136899
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleCarrier multiplication yields in CdSe and CdTe nanocrystals by transient photoluminescence
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