Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors

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dc.creatorLiu, R. S.
dc.creatorPettersson, H.
dc.creatorMichalak, L.
dc.creatorCanali, C. M.
dc.creatorSuyatin, D.
dc.creatorSamuelson, L.
dc.date2007-02-15
dc.date.accessioned2026-07-07T07:47:01Z
dc.date.available2026-07-07T07:47:01Z
dc.descriptionWe report on magnetotransport investigations of nano-scaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2K. Magnetotransport measurements carried out at 1.8K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which we interpret in terms of a switching mechanism driven by the shape anisotropy of the central wire-like Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which we tentatively attribute to excitation of magnons in the central island.
dc.description12 pages (including 4 figures). Accepted for publishing on APL
dc.identifierhttps://arxiv.org/abs/cond-mat/0702370
dc.identifierhttp://arxiv.org/abs/cond-mat/0702370
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124023
dc.subjectOther Condensed Matter
dc.titleLarge Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors
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