Ferroelectric switched all-metallic-oxide $p$-$n$ junctions

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dc.creatorYuan, J.
dc.creatorWu, H.
dc.creatorZhao, L.
dc.creatorJin, K.
dc.creatorCao, L. X.
dc.creatorZhu, B. Y.
dc.creatorZhu, S. J.
dc.creatorZhong, J. P.
dc.creatorMiao, J.
dc.creatorYang, H.
dc.creatorXu, B.
dc.creatorQi, X. Y.
dc.creatorHan, Y.
dc.creatorQiu, X. G.
dc.creatorDuan, X. F.
dc.creatorZhao, B. R.
dc.date2006-11-19
dc.date.accessioned2026-07-07T07:31:24Z
dc.date.available2026-07-07T07:31:24Z
dc.descriptionWe report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the built-in field $V_0$, the present metallic oxides $p$-$I$-$n$ junctions are switched by double barrier fields, the built-in field $V_0$, and the ferroelectric reversed polarized field $V_{rp}$, both take together to lead the junctions to possess definite parameters, such as definite negligible reversed current ($10^{-9}$ A), large breakdown voltage ($>$7 V), and ultrahigh rectification ($>2\times10^4$) in the bias voltage 1.2 V to 2.0 V and temperature range from 5 to over 300 K. The related transport feature, barrier size effect, and temperature effect are also observed and defined.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0611501
dc.identifierhttp://arxiv.org/abs/cond-mat/0611501
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/118739
dc.subjectMaterials Science
dc.titleFerroelectric switched all-metallic-oxide $p$-$n$ junctions
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