Self-doping instability of the Wigner-Mott insulator

dc.creatorPankov, S.
dc.creatorDobrosavljevic, V.
dc.date2007-05-23
dc.date2008-02-15
dc.date.accessioned2026-07-07T09:20:37Z
dc.date.available2026-07-07T09:20:37Z
dc.descriptionWe present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner crystal. Kinetic energy gained by delocalizing such excitations is found to lead to an instability of the insulator to self-doping above a critical carrier concentration $n=n_c$, mapping the problem to a density-driven Mott MIT. This mechanism provides a natural microscopic picture of several puzzling experimental features, including the large effective mass enhancement, the large resistivity drop, and the large positive magneto-resistance on the metallic side of the transition. We also present a global phase diagram for the clean 2D electron gas as a function of $n$ and parallel magnetic field $B_{\shortparallel}$, which agrees well with experimental findings in ultra clean samples.
dc.description5 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/0705.3428
dc.identifierhttp://arxiv.org/abs/0705.3428
dc.identifierPhys. Rev. B 77, 085104 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.085104
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/154780
dc.subjectStrongly Correlated Electrons
dc.titleSelf-doping instability of the Wigner-Mott insulator
dc.typetext

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