Tunable effective g-factor in InAs nanowire quantum dots

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dc.creatorBjörk, M. T.
dc.creatorFuhrer, A.
dc.creatorHansen, A. E.
dc.creatorLarsson, M. W.
dc.creatorJensen, L. E.
dc.creatorSamuelson, L.
dc.date2005-07-19
dc.date.accessioned2026-07-07T06:26:29Z
dc.date.available2026-07-07T06:26:29Z
dc.descriptionWe report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507433
dc.identifierhttp://arxiv.org/abs/cond-mat/0507433
dc.identifierPhys. Rev. B 72, 201307 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.201307
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97120
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleTunable effective g-factor in InAs nanowire quantum dots
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