Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction

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dc.creatorÖzyilmaz, Barbaros
dc.creatorJarillo-Herrero, Pablo
dc.creatorEfetov, Dmitri
dc.creatorAbanin, Dmitri A.
dc.creatorLevitov, Leonid S.
dc.creatorKim, Philip
dc.date2007-05-22
dc.date2007-09-11
dc.date.accessioned2026-07-07T09:31:51Z
dc.date.available2026-07-07T09:31:51Z
dc.descriptionWe have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the $p$ and $n$ regions. These fractional plateaus, originating from chiral edge states equilibration at the $p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which is found to be strong for some of the plateuas and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.
dc.description4 pages 4 figures, to appear in Phys. Rev. Lett. Original version arXiv:0705.3044v1 was separated and expanded to this current version and arXiv:0709.1731
dc.identifierhttps://arxiv.org/abs/0705.3044
dc.identifierhttp://arxiv.org/abs/0705.3044
dc.identifierPhys. Rev. Lett, 99, 166804 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.166804
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158607
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectronic transport and quantum Hall effect in bipolar graphene p-n-p junction
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