Quantized electron transport by interference-induced quantum dots of two cross-travelling surface acoustic waves

dc.creatorChen, Xiang-Song
dc.date2006-10-09
dc.date.accessioned2026-07-07T07:27:25Z
dc.date.available2026-07-07T07:27:25Z
dc.descriptionIn traditional approaches of obtaining quantized acoustoelectric current, a narrow channel is fabricated to form quantum dots, which hold a fixed number of electrons at a certain depth. We propose a natural way of forming quantum dots without the narrow channel, by the interference of two surface acoustic waves (SAWs) propagating across each other. A wide transportation area is defined by the usual (but widely separated) split-gate structure with another independent gate in between. This design can increase the quantized current by one to two orders of magnitude. The three-gate structure also allows separate control of the barrier height and the side-gate pinch-off voltage, thus avoids current leakage through the area beneath the side gates.
dc.description2 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0610226
dc.identifierhttp://arxiv.org/abs/cond-mat/0610226
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117367
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantized electron transport by interference-induced quantum dots of two cross-travelling surface acoustic waves
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