Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

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dc.creatorFlatté, Michael E.
dc.creatorHall, Kimberley C.
dc.date2006-07-18
dc.date.accessioned2026-07-07T07:16:03Z
dc.date.available2026-07-07T07:16:03Z
dc.descriptionA recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.
dc.description4 pages, no figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0607432
dc.identifierhttp://arxiv.org/abs/cond-mat/0607432
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113446
dc.subjectMesoscale and Nanoscale Physics
dc.titleResponse to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]
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