Single-particle states in spherical Si/SiO$_2$ quantum dots

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dc.creatorMoskalenko, A. S.
dc.creatorBerakdar, J.
dc.creatorProkofiev, A. A.
dc.creatorYassievich, I. N.
dc.date2006-09-08
dc.date2007-01-14
dc.date.accessioned2026-07-07T08:25:02Z
dc.date.available2026-07-07T08:25:02Z
dc.descriptionWe calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.
dc.description8 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0609193
dc.identifierhttp://arxiv.org/abs/cond-mat/0609193
dc.identifierPhys. Rev. B 76, 085427 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.085427
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136540
dc.subjectMaterials Science
dc.titleSingle-particle states in spherical Si/SiO$_2$ quantum dots
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