X-ray photoemission study of CoFeB/MgO thin film bi-layers

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dc.creatorRead, J. C.
dc.creatorMather, P. G.
dc.creatorBuhrman, R. A.
dc.date2007-02-09
dc.date.accessioned2026-07-07T07:45:44Z
dc.date.available2026-07-07T07:45:44Z
dc.descriptionWe present results from an X-ray photoemission spectroscopy (XPS) study of CoFeB/MgO bi-layers where we observe process-dependent formation of B, Fe, and Co oxides at the CoFeB/MgO interface due to oxidation of CoFeB during MgO deposition. Vacuum annealing reduces the Co and Fe oxides but further incorporates B into the MgO forming a composite MgBxOy layer. Inserting an Mg layer between CoFeB and MgO introduces an oxygen sink, providing increased control over B content in the barrier.
dc.description13 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0702232
dc.identifierhttp://arxiv.org/abs/cond-mat/0702232
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123630
dc.subjectMaterials Science
dc.titleX-ray photoemission study of CoFeB/MgO thin film bi-layers
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