Phonon drag of electrons at high temperatures

dc.creatorVdovenkov, V. A.
dc.date2002-07-08
dc.date.accessioned2026-07-07T02:46:10Z
dc.date.available2026-07-07T02:46:10Z
dc.descriptionTemperature-dependent thermoelectric power (TEP) in semiconductor crystals and crystal structures containing an electron-vibrational centers (EVC) was investigated in this article. The TEP contain narrow pius at Debye temperatures for different phonons. In thin epitaxial layers on substrates such pius exist at Debye temperatures of substrates phonons. These pius existence imposable to explain on basis of known TEP theory but it may be explained by the phonon drag of electrons (PDE) effect. In this connection there is the necessity to change traditional point of view on the PDE effect existence only at low temperatures and expand the PDE theory on case of strong electron-phonon coupling provided by EVC at high temperatures.
dc.description14 pages thith 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0207218
dc.identifierhttp://arxiv.org/abs/cond-mat/0207218
dc.identifierV.A.Vdovenkov. Phonon drag of electrons caused by electron-vibrational transitions in materials. News of Higher School, Materials of electronic engineering, N1, p. 65 (2005), in Russian.
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19570
dc.subjectStrongly Correlated Electrons
dc.subjectDisordered Systems and Neural Networks
dc.titlePhonon drag of electrons at high temperatures
dc.typetext

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