Sub-Poissonian phononic population in a nanoelectromechanical system

dc.creatorMerlo, Matteo
dc.creatorHaupt, Federica
dc.creatorCavaliere, Fabio
dc.creatorSassetti, Maura
dc.date2007-07-25
dc.date2007-09-21
dc.date.accessioned2026-07-07T09:25:26Z
dc.date.available2026-07-07T09:25:26Z
dc.descriptionPopulation of a phononic mode coupled to a single-electron transistor in the sequential tunneling regime is discussed for the experimentally realistic case of intermediate electron-phonon coupling. Features like a sub-Poissonian bosonic distribution are found in regimes where electron transport drives the oscillator strongly out of equilibrium with only few phonon states selectively populated. The electron Fano factor is compared to fluctuations in the phonon distribution, showing that all possible combinations of sub- and super-Poissonian character can be realized.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0707.3680
dc.identifierhttp://arxiv.org/abs/0707.3680
dc.identifierRevised version published in New J. Phys. 10 No 2, 023008 (2008)
dc.identifierdoi:10.1088/1367-2630/10/2/023008
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156405
dc.subjectMesoscale and Nanoscale Physics
dc.titleSub-Poissonian phononic population in a nanoelectromechanical system
dc.typetext

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