Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling
| dc.creator | Didukh, Leonid | |
| dc.creator | Hankevych, Vasyl | |
| dc.date | 1998-11-19 | |
| dc.date.accessioned | 2026-07-07T03:12:08Z | |
| dc.date.available | 2026-07-07T03:12:08Z | |
| dc.description | In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is devoted to a further study of metal-insulator transition in this model,in particular, an investigation of temperature-induced metal-to-insulator transition. The dependence of energy gap on concentration of doubly occupancy leads to increasing energy gap width with increase of temperature. Thus narrow-band system can undergo transition from a metallic state to an insulating state with the increase of temperature. For some values of intra-atomic Coulomb repulsion $U$ and $w_0$ ($w_0$ is half-bandwidth) we find the values of temperature when narrow-band material undergoes transition from a metallic state to an insulating state. We show that at given $U/w_0$ metal-insulator transition in model with non-equivalent Hubbard sub-bands can occur at smaller temperature than in the Hubbard model. It testifies on the fact that taking into account of correlated hopping is important for a consideration of metal-insulator transition problem. | |
| dc.description | 6 pages, 3 eps figures, Latex 2.09, accepted for publication in Cond. Matt. Phys., presented at INTAS-Ukraine Workshop on Condensed Matter Physics, Lviv, May 1998 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9811285 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9811285 | |
| dc.identifier | Condensed Matter Physics, vol. 2, No. 3(19), p. 447-452 (1999) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/28796 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling | |
| dc.type | text |