Interaction and disorder in bilayer counterflow transport at filling factor one
| dc.creator | Tutuc, E. | |
| dc.creator | Shayegan, M. | |
| dc.date | 2005-04-05 | |
| dc.date.accessioned | 2026-07-07T03:04:27Z | |
| dc.date.available | 2026-07-07T03:04:27Z | |
| dc.description | We study high mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling factor $ν=1$. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity ($ρ_{xy}$) decreases at a given temperature, while the counterflow longitudinal resistivity ($ρ_{xx}$), which is much larger than $ρ_{xy}$, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in $ρ_{xx}$ at $ν=1$, while $ρ_{xy}$ remains vanishingly small. Our data suggest that the finite $ρ_{xx}$ at $ν=1$ is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system. | |
| dc.description | 4 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0504119 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0504119 | |
| dc.identifier | Phys. Rev. B 72, 081307 (2005) | |
| dc.identifier | doi:10.1103/PhysRevB.72.081307 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/26141 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Interaction and disorder in bilayer counterflow transport at filling factor one | |
| dc.type | text |