Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

Simple item page
dc.creatorUtsumi, Yasuhiro
dc.creatorGolubev, Dmitri S.
dc.creatorSchön, Gerd
dc.date2005-08-21
dc.date.accessioned2026-07-07T06:26:37Z
dc.date.available2026-07-07T06:26:37Z
dc.descriptionWe evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
dc.description4 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0508500
dc.identifierhttp://arxiv.org/abs/cond-mat/0508500
dc.identifierPhys. Rev. Lett. 96, 086803 (2006)
dc.identifierdoi:10.1103/PhysRevLett.96.086803
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97161
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleFull Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance
dc.typetext

Files

Collections

arXiv