Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

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dc.creatorCade, N. I.
dc.creatorRoshan, R.
dc.creatorHauert, M.
dc.creatorMaciel, A. C.
dc.creatorRyan, J. F.
dc.creatorSchwarz, A.
dc.creatorSchäpers, Th.
dc.creatorLüth, H.
dc.date2004-06-21
dc.date.accessioned2026-07-07T06:27:21Z
dc.date.available2026-07-07T06:27:21Z
dc.descriptionCarrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we observe strong emission from the first excited state of the QWR below ~50 K. This is attributed to reduced inter-subband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v-groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state, occurs only at temperatures > 30 K. Values for the low temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340 ps and 160 ps respectively), and their corresponding localization lengths along the wire estimated.
dc.description9 pages, 8 figures, submitted to Phys. Rev. B Attempted to correct corrupt figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0406458
dc.identifierhttp://arxiv.org/abs/cond-mat/0406458
dc.identifierdoi:10.1103/PhysRevB.70.195308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97395
dc.subjectMesoscale and Nanoscale Physics
dc.titleCarrier relaxation in GaAs v-groove quantum wires and the effects of localization
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