The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors

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dc.creatorSliwa, C.
dc.creatorDietl, T.
dc.date2005-05-05
dc.date.accessioned2026-07-07T12:04:54Z
dc.date.available2026-07-07T12:04:54Z
dc.descriptionThe muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x} {Mn}_x {N}$, ${Ga}_{1-x} {Mn}_x {As}$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{apparent} value of the s-d exchange coupling $N_0 α$ is reduced. It is shown that the magnitude of this effect increases when x diminishes. Our model may explain an unusual behavior of electron spin splitting observed recently in those two materials in the Mn concentration range x <= 0.2%.
dc.description4 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0505126
dc.identifierhttp://arxiv.org/abs/cond-mat/0505126
dc.identifierincluded in Physical Review B 78, 165205 (2008) as Section VI
dc.identifierdoi:10.1103/PhysRevB.78.165205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/208238
dc.subjectMaterials Science
dc.titleThe influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
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