Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

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dc.creatorMoriyama, T.
dc.creatorCao, R.
dc.creatorFan, X.
dc.creatorXuan, G.
dc.creatorNikolic, B. K.
dc.creatorTserkovnyak, Y.
dc.creatorKolodzey, J.
dc.creatorXiao, John Q.
dc.date2008-02-25
dc.date.accessioned2026-07-07T09:23:02Z
dc.date.available2026-07-07T09:23:02Z
dc.descriptionWe report the electrical detection of magnetization dynamics in an Al/AlOx/Ni80Fe20/Cu tunnel junction, where a Ni80Fe20 ferromagnetic layer is brought into precession under the ferromagnetic resonance (FMR) conditions. The dc voltage generated across the junction by the precessing ferromagnet is enhanced about an order of magnitude compared to the voltage signal observed when the contacts in this type of multilayered structure are ohmic. We discuss the relation of this phenomenon to magnetic spin pumping and speculate on other possible underlying mechanisms responsible for the enhanced electrical signal.
dc.identifierhttps://arxiv.org/abs/0802.3646
dc.identifierhttp://arxiv.org/abs/0802.3646
dc.identifierdoi:10.1103/PhysRevLett.100.067602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155593
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleTunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer
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