Resistivity model for both paramagnetic and ferromagnetic phases
| dc.creator | Arulsamy, Andrew Das | |
| dc.date | 2004-02-05 | |
| dc.date | 2004-08-15 | |
| dc.date.accessioned | 2026-07-07T02:56:19Z | |
| dc.date.available | 2026-07-07T02:56:19Z | |
| dc.description | The resistivity, $ρ$ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga$_{1-x}$Mn$_x$As system are 8-12 K and 10$^{19}$ cm$^{-3}$, remarkably identical with the experimental values of 10-12 K and 10$^{18}-10^{20}$ cm$^{-3}$ respectively. | |
| dc.description | Updated Refs | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0402153 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0402153 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/23273 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.subject | Materials Science | |
| dc.title | Resistivity model for both paramagnetic and ferromagnetic phases | |
| dc.type | text |