Modeling of a Resonant Tunneling Diode Optical Modulator

Simple item page
dc.creatorCalado, J. J. N.
dc.creatorFigueiredo, J. M. L.
dc.creatorIronside, C. N.
dc.date2005-04-01
dc.date.accessioned2026-07-07T05:54:32Z
dc.date.available2026-07-07T05:54:32Z
dc.descriptionThe integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulator agree with preliminary experimental data, foreseeing for an optimized device modulation depths up to 23 dB with chirp parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600 nm).
dc.description5 pages
dc.identifierhttps://arxiv.org/abs/physics/0504006
dc.identifierhttp://arxiv.org/abs/physics/0504006
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/86995
dc.subjectOptics
dc.subjectInstrumentation and Detectors
dc.titleModeling of a Resonant Tunneling Diode Optical Modulator
dc.typetext

Files

Collections

arXiv