Characterizations of strain and defect free GaN nanorods on Si(111) substrates

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dc.creatorSeo, H. W.
dc.creatorChen, Q. Y.
dc.creatorIliev, M. N.
dc.creatorChu, W. K.
dc.creatorTu, L. W.
dc.creatorHsiao, C. L.
dc.creatorMeen, James K.
dc.date2005-03-09
dc.date.accessioned2026-07-07T03:04:05Z
dc.date.available2026-07-07T03:04:05Z
dc.descriptionGaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser source and electron irradiation during CL imaging lead to an increase of non-equilibrium electrons, suggesting an effective approach to photo-emitting or field emitting device applications. The nanorods, largely isolated from but perfectly aligned with the sustaining matrix, are grown in excellent epitaxy with the Si substrates.
dc.identifierhttps://arxiv.org/abs/cond-mat/0503195
dc.identifierhttp://arxiv.org/abs/cond-mat/0503195
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25998
dc.subjectMaterials Science
dc.titleCharacterizations of strain and defect free GaN nanorods on Si(111) substrates
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