Model of crystal growth with simulated self-attraction
| dc.creator | Timonin, P. N. | |
| dc.date | 2008-11-26 | |
| dc.date.accessioned | 2026-07-07T12:04:46Z | |
| dc.date.available | 2026-07-07T12:04:46Z | |
| dc.description | The (1+1)-dimensional kinetic model of crystal growth with simulated self-attraction and random sequential or parallel dynamics is introduced and studied via Monte-Carlo simulations. To imitate the attraction of absorbing atoms the probability of deposition is chosen to depend on the number of the nearest-neighbor atoms surrounding the deposited atom so it increases with this number. As well the evaporation probabilities are chosed to roughly account for this self-attraction. The model exhibits the interface depinning transition with KPZ-type roughness behavior in the moving phase. The critical indices of the correlation lengths are $ν_\parallel = 0.82 \pm 0.03,{\rm{}}ν_ \bot = 0.55 \pm 0.02$ and the critical index of the growth velocity is $1.08 \pm 0.03$ indicating the new universality class of the depinning transition. The critical properties of the model do not depend on the type of dynamics implemented. | |
| dc.description | 7 pages, 9 figures | |
| dc.identifier | https://arxiv.org/abs/0811.4302 | |
| dc.identifier | http://arxiv.org/abs/0811.4302 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/208196 | |
| dc.subject | Statistical Mechanics | |
| dc.title | Model of crystal growth with simulated self-attraction | |
| dc.type | text |