Crossed-anisotropy films for magnetic tunnel junctions and magnetic memory applications

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dc.creatorGrigorenko, A. N.
dc.creatorMapps, D. J.
dc.date2002-09-25
dc.date.accessioned2026-07-07T02:47:25Z
dc.date.available2026-07-07T02:47:25Z
dc.descriptionA prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the introduction of crossed-anisotropy results in smaller switching fields and better switching times compared to the conventional case of aligned anisotropies. The magnetoresistive properties of fabricated devices are in good agreement with the micromagnetic model.
dc.description15 pages, 5 Figures. Submitted to JAP
dc.identifierhttps://arxiv.org/abs/cond-mat/0209578
dc.identifierhttp://arxiv.org/abs/cond-mat/0209578
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20007
dc.subjectMaterials Science
dc.titleCrossed-anisotropy films for magnetic tunnel junctions and magnetic memory applications
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