Spin and Valley dependent analysis of the two-dimensional low-density electron system in Si-MOSFETS
| dc.creator | Dharma-wardana, M. W. C. | |
| dc.creator | Perrot, François | |
| dc.date | 2004-02-09 | |
| dc.date.accessioned | 2026-07-07T02:56:23Z | |
| dc.date.available | 2026-07-07T02:56:23Z | |
| dc.description | The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin polarization $ζ$ in the strongly-correlated low-density regime, using a classical mapping to a hypernetted-chain (CHNC) equation inclusive of bridge terms. Here the ten distribution functions, arising from spin and valley indices, are self-consistently calculated to obtain the total free energy, the chemical potential, the compressibility and the spin susceptibility. The T=0 results are compared with the 2-valley Quantum Monte Carlo (QMC) data of Conti et al. (at T=0, $ζ=0$) and found to be in excellent agreement. However, unlike in the one-valley 2DES, it is shown that {\it the unpolarized phase is always the stable phase in the 2-valley system}, right up to Wigner Crystallization at $r_s=42$. This leads to the insensitivity of $g^*$ to the spin polarization and to the density. The compressibility and the spin-susceptibility enhancement calculated from the free energy confirm the validity of a simple approach to the two-valley response based on coupled-mode formation. The three methods, QMC, CHNC, and Coupled-mode theory agree closely. Our results contain no {\it ad hoc} fit parameters. They agree with experiments and do not invoke impurity effects or metal-insulator transition phenomenology. | |
| dc.description | 10 pages 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0402253 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0402253 | |
| dc.identifier | Phys. Rev. B, vol 70, 35308 (2004) with extra figure, revisions. | |
| dc.identifier | doi:10.1103/PhysRevB.70.035308 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/23305 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Spin and Valley dependent analysis of the two-dimensional low-density electron system in Si-MOSFETS | |
| dc.type | text |