Linear magnetization dependence of the intrinsic anomalous Hall effect

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dc.creatorZeng, Changgan
dc.creatorYao, Yugui
dc.creatorNiu, Qian
dc.creatorWeitering, Hanno H.
dc.date2006-06-14
dc.date.accessioned2026-07-07T07:12:39Z
dc.date.available2026-07-07T07:12:39Z
dc.descriptionThe anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K, but also at finite temperatures, up to about ~ 240 K (0.8 T$_C$})
dc.identifierhttps://arxiv.org/abs/cond-mat/0606354
dc.identifierhttp://arxiv.org/abs/cond-mat/0606354
dc.identifierPhys. Rev. Lett. 96, 037204 (2006)
dc.identifierdoi:10.1103/PhysRevLett.96.037204
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112146
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleLinear magnetization dependence of the intrinsic anomalous Hall effect
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