Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

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dc.creatorFigueira, D. S. L
dc.creatorMustafa, D.
dc.creatorTessler, L. R.
dc.creatorFrateschi, N. C.
dc.date2008-06-09
dc.date.accessioned2026-07-07T09:43:24Z
dc.date.available2026-07-07T09:43:24Z
dc.descriptionSi nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
dc.description3 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0806.1489
dc.identifierhttp://arxiv.org/abs/0806.1489
dc.identifierMicrowave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International, (IEEE cat. 07TH8919C, ISBN 1-4244-0661-7, Library of Congress 2006933012)
dc.identifierdoi:10.1109/IMOC.2007.4404253
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162543
dc.subjectOptics
dc.titleImpact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures
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