Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition

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dc.creatorBaturina, T. I.
dc.creatorMironov, A. Yu.
dc.creatorVinokur, V. M.
dc.creatorBaklanov, M. R.
dc.creatorStrunk, C.
dc.date2008-10-24
dc.date2009-02-02
dc.date.accessioned2026-07-07T12:36:20Z
dc.date.available2026-07-07T12:36:20Z
dc.descriptionWe investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence of distinct regimes upon decreasing temperature crossing over from logarithmic to activated behavior with the variable-range hopping squeezing in between. In perpendicular magnetic fields below 2 T, the thermally activated regime retains at intermediate temperatures, whereas at ultralow temperatures, the resistance increases faster than that of the thermally activated type. This indicates a change of the mechanism of the conductivity. We find that at higher magnetic fields the thermally activated behavior disappears and the magnetoresistive isotherms saturate towards the value close to quantum resistance h/e^2.
dc.descriptionrevtex4 file, 6 pages, 4 figures (published)
dc.identifierhttps://arxiv.org/abs/0810.4351
dc.identifierhttp://arxiv.org/abs/0810.4351
dc.identifierPis'ma v ZhETF 88, 867 (2008) [JETP Lett. 88, 752 (2008)]
dc.identifierdoi:10.1134/S0021364008230112
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/218057
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleHyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition
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