Electronic shot noise in fractal conductors

dc.creatorGroth, C. W.
dc.creatorTworzydlo, J.
dc.creatorBeenakker, C. W. J.
dc.date2008-03-18
dc.date.accessioned2026-07-07T09:35:58Z
dc.date.available2026-07-07T09:35:58Z
dc.descriptionBy solving a master equation in the Sierpinski lattice and in a planar random-resistor network, we determine the scaling with size L of the shot noise power P due to elastic scattering in a fractal conductor. We find a power-law scaling P ~ L^(d_f-2-alpha), with an exponent depending on the fractal dimension d_f and the anomalous diffusion exponent alpha. This is the same scaling as the time-averaged current I, which implies that the Fano factor F=P/2eI is scale independent. We obtain a value F=1/3 for anomalous diffusion that is the same as for normal diffusion, even if there is no smallest length scale below which the normal diffusion equation holds. The fact that F remains fixed at 1/3 as one crosses the percolation threshold in a random-resistor network may explain recent measurements of a doping-independent Fano factor in a graphene flake.
dc.description6 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0803.2709
dc.identifierhttp://arxiv.org/abs/0803.2709
dc.identifierPhys.Rev.Lett. 100, 176804 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.176804
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160010
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectronic shot noise in fractal conductors
dc.typetext

Files

Collections