Transport gap in side-gated graphene constrictions

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dc.creatorMolitor, F.
dc.creatorJacobsen, A.
dc.creatorStampfer, C.
dc.creatorGuettinger, J.
dc.creatorIhn, T.
dc.creatorEnsslin, K.
dc.date2008-11-05
dc.date2009-03-10
dc.date.accessioned2026-07-07T12:50:10Z
dc.date.available2026-07-07T12:50:10Z
dc.descriptionWe present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.
dc.identifierhttps://arxiv.org/abs/0811.0676
dc.identifierhttp://arxiv.org/abs/0811.0676
dc.identifierPhys. Rev. B 79, 075426 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.075426
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/222604
dc.subjectMesoscale and Nanoscale Physics
dc.titleTransport gap in side-gated graphene constrictions
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