Metastability from Photoluminescence of n-type GaN

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dc.creatorPark, C. S.
dc.creatorKang, T. W.
dc.date2004-11-09
dc.date2005-07-20
dc.date.accessioned2026-07-07T03:01:57Z
dc.date.available2026-07-07T03:01:57Z
dc.descriptionWe measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.
dc.description9 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411224
dc.identifierhttp://arxiv.org/abs/cond-mat/0411224
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25233
dc.subjectMaterials Science
dc.titleMetastability from Photoluminescence of n-type GaN
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