Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons

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dc.creatorNarvaez, Gustavo A.
dc.creatorBester, Gabriel
dc.creatorZunger, Alex
dc.date2006-04-28
dc.date2006-08-02
dc.date.accessioned2026-07-07T07:08:39Z
dc.date.available2026-07-07T07:08:39Z
dc.descriptionWe calculate the P-shell--to-S-shell decay lifetime τ(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes τ(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.
dc.descriptionVersion published in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0605003
dc.identifierhttp://arxiv.org/abs/cond-mat/0605003
dc.identifierPhys. Rev. B 74, 075403 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.075403
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/110787
dc.subjectMaterials Science
dc.titleCarrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons
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