Interface-anisotropy induced asymmetry of intermixing in bilayers

dc.creatorSüle, P.
dc.creatorMenyhárd, M.
dc.creatorKótis, L.
dc.creatorLábár, J.
dc.creatorEgelhoff Jr, W. F.
dc.date2005-10-04
dc.date.accessioned2026-07-07T06:20:46Z
dc.date.available2026-07-07T06:20:46Z
dc.descriptionThe ion-sputtering induced intermixing is studied by molecular dynamics (MD) simulations and by Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti and in Ti/Pt. An unexpected enhancement of the injection of the heavy Pt atoms into the Ti substrate is observed both by AES-DP and by MD simulations. In Ti/Pt we get a much weaker interdiffusion than in Pt/Ti. The asymmetry is explained by the backscattering of hyperthermal particles at the mass-anisotropic interface and which is reproduced by computer atomistic simulations. The AES-DP measurements support our earlier predictions (P. Süle, M. Menyhárd, Phys. Rev., {\bf B71}, 113413 (2005)) obtained for mass-anisotropic bilayers.
dc.description4 pages, 4 figures, sule@mfa.kfki.hu
dc.identifierhttps://arxiv.org/abs/cond-mat/0510077
dc.identifierhttp://arxiv.org/abs/cond-mat/0510077
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95405
dc.subjectMaterials Science
dc.titleInterface-anisotropy induced asymmetry of intermixing in bilayers
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