Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon

Simple item page
dc.creatorLai, K.
dc.creatorPan, W.
dc.creatorTsui, D. C.
dc.creatorLyon, S.
dc.creatorMühlberger, M.
dc.creatorSchäffler, F.
dc.date2005-10-21
dc.date.accessioned2026-07-07T06:44:39Z
dc.date.available2026-07-07T06:44:39Z
dc.descriptionWe report here a systematic study of the energy gaps at the odd-integer quantum Hall states $ν=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane B fields. However, the $ν=3$ valley gap differs by about a factor of 3 ($Δ_v\sim$ 0.4K vs. 1.2K) at either side of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at $ν=3$ and 5 rise rapidly when approaching the coincidence angles. We believe that such anomaly is related to strong coupling of the nearly degenerate Landau levels.
dc.description4 REVTEX pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510599
dc.identifierhttp://arxiv.org/abs/cond-mat/0510599
dc.identifierPhys. Rev. Lett. 96, 076805 (2006)
dc.identifierdoi:10.1103/PhysRevLett.96.076805
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102850
dc.subjectMesoscale and Nanoscale Physics
dc.titleObservation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon
dc.typetext

Files

Collections

arXiv