Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

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dc.creatorFlees, Daniel J.
dc.creatorLukens, J. E.
dc.creatorHan, Siyuan
dc.date1999-05-06
dc.date.accessioned2026-07-07T03:13:23Z
dc.date.available2026-07-07T03:13:23Z
dc.descriptionThe reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the island of the transistor. Any asymmetry in the junctions of the transistor makes the coherent mixing of charge-states appear as a finite gap-splitting at the electrostatic degeneracy point between states differing by one excess Cooper-pair on the island. The measured gap-splitting in an asymmetric transistor clearly demonstrates the effect.
dc.description8 pages including 4 figures. Paper presented at the workshop on "Macroscopic Quantum Tunneling and Dissipation", (Naples, June 1998). To be published in Jour. Supercond
dc.identifierhttps://arxiv.org/abs/cond-mat/9905065
dc.identifierhttp://arxiv.org/abs/cond-mat/9905065
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29281
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleObservation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors
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