Screening and impurity ionization energy in semiconductors

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dc.creatorKornyushin, Yuri
dc.date2007-11-20
dc.date2007-12-04
dc.date.accessioned2026-07-07T08:46:40Z
dc.date.available2026-07-07T08:46:40Z
dc.descriptionUsually microscopic electrostatic field around charged impurity ions is neglected when the ionization energy is concerned. The ionization energy is considered to be equal to that of a lonely impurity atom. Here the energy of the electrostatic field around charged impurity ions in semiconductor is taken into account. It is shown that the energy of this field contributes to decrease in the effective ionization energy. At high enough current carriers concentration the effective ionization energy becomes zero.
dc.descriptionMicroscopic electrostatic field around ions is taken into account
dc.identifierhttps://arxiv.org/abs/0711.3113
dc.identifierhttp://arxiv.org/abs/0711.3113
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143325
dc.subjectMaterials Science
dc.titleScreening and impurity ionization energy in semiconductors
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