Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

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dc.creatorRoddaro, S.
dc.creatorFuhrer, A.
dc.creatorFasth, C.
dc.creatorSamuelson, L.
dc.creatorXiang, J.
dc.creatorLieber, C. M.
dc.date2007-06-19
dc.date.accessioned2026-07-07T08:11:16Z
dc.date.available2026-07-07T08:11:16Z
dc.descriptionWe demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0706.2883
dc.identifierhttp://arxiv.org/abs/0706.2883
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/132067
dc.subjectMesoscale and Nanoscale Physics
dc.titleStrong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires
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