Monovacancy and Substitutional Defects in Hexagonal Silicon Nanotubes

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dc.creatorKim, Gunn
dc.creatorHong, Suklyun
dc.date2007-09-10
dc.date.accessioned2026-07-07T08:28:28Z
dc.date.available2026-07-07T08:28:28Z
dc.descriptionWe present a first-principle study of geometrical and electronic structure of hexagonal single-walled silicon nanotubes with a monovacancy or a substitutional defect. The C, Al or P atoms are chosen as substitutional impurities. It is found that the defect such as a monovacancy or a substitutional impurity results in deformation of the hexagonal single-walled silicon nanotube. In both cases, a relatively localized unoccupied state near the Fermi level occurs due to this local deformation. The difference in geometrical and electronic properties of different substitutional impurities is discussed.
dc.description5 figures
dc.identifierhttps://arxiv.org/abs/0709.1299
dc.identifierhttp://arxiv.org/abs/0709.1299
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137629
dc.subjectMaterials Science
dc.titleMonovacancy and Substitutional Defects in Hexagonal Silicon Nanotubes
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