Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

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dc.creatorBrown, K. R.
dc.creatorSun, L.
dc.creatorKane, B. E.
dc.date2006-01-24
dc.date2006-05-26
dc.date.accessioned2026-07-07T06:57:46Z
dc.date.available2026-07-07T06:57:46Z
dc.descriptionWe present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO_2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.
dc.description4 pages, 4 figures; typos corrected, minor clarifications added; published in APL
dc.identifierhttps://arxiv.org/abs/cond-mat/0601553
dc.identifierhttp://arxiv.org/abs/cond-mat/0601553
dc.identifierAppl. Phys. Lett. 88, 213118 (2006)
dc.identifierdoi:10.1063/1.2207557
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/107093
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectric-field-dependent spectroscopy of charge motion using a single-electron transistor
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