Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

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dc.creatorMani, R. G.
dc.creatorSmet, J. H.
dc.creatorvon Klitzing, K.
dc.creatorNarayanamurti, V.
dc.creatorJohnson, W. B.
dc.creatorUmansky, V.
dc.date2003-03-03
dc.date2004-05-24
dc.date.accessioned2026-07-07T06:29:41Z
dc.date.available2026-07-07T06:29:41Z
dc.descriptionWe suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.
dc.description4 pages, 4 color figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0303034
dc.identifierhttp://arxiv.org/abs/cond-mat/0303034
dc.identifierPhys. Rev. B 69, 193304 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.193304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98120
dc.subjectMesoscale and Nanoscale Physics
dc.titleRadiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices
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