On the determination of Poisson's ratio of stressed monolayer and bilayer submicron thick films

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dc.creatorMartins, P.
dc.creatorMalhaire, C.
dc.creatorBrida, S.
dc.creatorBarbier, D.
dc.date2008-05-07
dc.date.accessioned2026-07-07T12:18:42Z
dc.date.available2026-07-07T12:18:42Z
dc.descriptionIn this paper, the bulge test is used to determine the mechanical properties of very thin dielectric membranes. Commonly, this experimental method permits to determine the residual stress (s0) and biaxial Young's modulus (E/(1-u)). Associating square and rectangular membranes with different length to width ratios, the Poisson's ratio (u) can also be determined. LPCVD Si3N4 monolayer and Si3N4/SiO2 bilayer membranes, with thicknesses down to 100 nm, have been characterized giving results in agreement with literature for Si3N4, E = 212 $\pm$ 14 GPa, s0 = 420 $\pm$ 8 and u = 0.29.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)
dc.identifierhttps://arxiv.org/abs/0805.0899
dc.identifierhttp://arxiv.org/abs/0805.0899
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/212500
dc.subjectOther Computer Science
dc.titleOn the determination of Poisson's ratio of stressed monolayer and bilayer submicron thick films
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