Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films

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dc.creatorDoh, Yong-Joo
dc.creatorYi, Gyu-Chul
dc.date2009-04-15
dc.date.accessioned2026-07-07T13:04:10Z
dc.date.available2026-07-07T13:04:10Z
dc.descriptionWe report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybrid FLG-P(VDF/TrFE) devices is attributed to a remanent electric field induced by the ferroelectric polarization of the P(VDF/TrFE) layer.
dc.description11 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0904.2242
dc.identifierhttp://arxiv.org/abs/0904.2242
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/227064
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleNonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films
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