Recrystallization of epitaxial GaN under indentation

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dc.creatorDhara, S.
dc.creatorDas, C. R.
dc.creatorHsu, H. C.
dc.creatorRaj, Baldev
dc.creatorBhaduri, A. K.
dc.creatorChen, L. C.
dc.creatorChen, K. H.
dc.creatorAlbert, S. K.
dc.creatorRay, Ayan
dc.date2008-04-11
dc.date2008-04-15
dc.date.accessioned2026-07-07T09:32:28Z
dc.date.available2026-07-07T09:32:28Z
dc.descriptionWe report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.
dc.description10 pages, 3 figures,
dc.identifierhttps://arxiv.org/abs/0804.1824
dc.identifierhttp://arxiv.org/abs/0804.1824
dc.identifierAppl. Phys. Lett. 92 (2008) 143114
dc.identifierdoi:10.1063/1.2907851
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158790
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleRecrystallization of epitaxial GaN under indentation
dc.typetext

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