A finite element analysis of a silicon based double quantum dot structure

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dc.creatorRahman, S.
dc.creatorGorman, J.
dc.creatorBarnes, C. H. W.
dc.creatorWilliams, D. A.
dc.creatorLangtangen, H. P.
dc.date2005-12-21
dc.date2006-04-06
dc.date.accessioned2026-07-07T06:56:41Z
dc.date.available2026-07-07T06:56:41Z
dc.descriptionWe present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.
dc.identifierhttps://arxiv.org/abs/quant-ph/0512183
dc.identifierhttp://arxiv.org/abs/quant-ph/0512183
dc.identifierPhys. Rev. B 73, 233307, (2006)
dc.identifierdoi:10.1103/PhysRevB.73.233307
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/106734
dc.subjectQuantum Physics
dc.titleA finite element analysis of a silicon based double quantum dot structure
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