Growth kinetics effects on self-assembled InAs/InP quantum dots

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dc.creatorBansal, Bhavtosh
dc.creatorGokhale, M. R.
dc.creatorBhattacharya, Arnab
dc.creatorArora, B. M.
dc.date2005-06-24
dc.date.accessioned2026-07-07T06:25:49Z
dc.date.available2026-07-07T06:25:49Z
dc.descriptionA systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a comparatively higher growth rate and low growth temperature, the quantum dot density, their average size and hence the peak emission wavelength can be tuned by changing efficiency of the surface diffusion (determined by the growth temperature) relative to the growth flux. We further observe that the distribution of quantum dot heights, for samples grown under varying conditions, if normalized to the mean height, can be nearly collapsed onto a single Gaussian curve.
dc.description2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0506648
dc.identifierhttp://arxiv.org/abs/cond-mat/0506648
dc.identifierAppl. Phys. Lett. 87, 203104 (2005)
dc.identifierdoi:10.1063/1.2128486
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96936
dc.subjectMaterials Science
dc.titleGrowth kinetics effects on self-assembled InAs/InP quantum dots
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