Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides

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dc.creatorDenlinger, J. D.
dc.creatorClack, J. A.
dc.creatorAllen, J. W.
dc.creatorGweon, G. -H.
dc.creatorPoirier, D. M.
dc.creatorOlson, C. G.
dc.creatorSarrao, J. L.
dc.creatorFisk, Z.
dc.date2000-09-02
dc.date2002-06-07
dc.date.accessioned2026-07-07T02:38:38Z
dc.date.available2026-07-07T02:38:38Z
dc.descriptionThis paper has been withdrawn by the authors due to new theoretical evidence and experimental proof that the semiconducting bandgap reported in this paper and ascribed to a surface region is in fact a bulk property of divalent hexaborides. As reported in J. D. Denlinger et al., cond-mat/0107429, which supercedes this paper, bulk-sensitive boron K-edge soft x-ray emission provides a complementary confirmation of the X-point band gap identified by angle-resolved photoemission.
dc.descriptionThis paper is withdrawn and has been superceded by cond-mat/0107429, showing the band gap to be a bulk property
dc.identifierhttps://arxiv.org/abs/cond-mat/0009022
dc.identifierhttp://arxiv.org/abs/cond-mat/0009022
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16738
dc.subjectStrongly Correlated Electrons
dc.titleBandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides
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