Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

Simple item page
dc.creatorSchwartz, Dana A.
dc.creatorGamelin, Daniel R.
dc.date2004-04-21
dc.date.accessioned2026-07-07T02:57:45Z
dc.date.available2026-07-07T02:57:45Z
dc.descriptionThe discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.
dc.identifierhttps://arxiv.org/abs/cond-mat/0404518
dc.identifierhttp://arxiv.org/abs/cond-mat/0404518
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23794
dc.subjectMaterials Science
dc.titleReversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor
dc.typetext

Files

Collections

arXiv